Home > News > The introduction to the preparation process of sio2 nanomaterials by chemical vapor deposition

The introduction to the preparation process of sio2 nanomaterials by chemical vapor deposition

wallpapers News 2021-02-06

The method forms nanomaterials through the chemical element reaction of one or several gaseous elements or compounds on a heated substrate. It has the advantages of good uniformity and can be deposited on the entire substrate. The disadvantage is that the substrate temperature is high. With the development of other related technologies, many new technologies derived from it, such as molecular beam epitaxy (MBE), metal-organic compound vapour deposition (MOCVD), chemical beam epitaxy (CBE), laser-induced chemical vapour deposition (PVD).


1. Molecular beam epitaxy (MBE)

Place the substrate and several molecular beam source furnaces relatively in the ultra-high vacuum system. Still, the various elements and doping elements of the compound into different furnace sources, and heat the furnace source make them at a certain speed and beam current. The intensity ratio is sprayed onto the surface of the heated substrate. The epitaxial growth of the crystals is carried out on the surface. This method can prepare different superlattice materials, and the epitaxial surface and interface can reach molecular level flatness. Combined with appropriate mask and laser induction technology, 3D pattern structure epitaxial growth can also be realized. But the growth rate of MBE is low, generally, 0.1~1 um/h.

2. Metal-organic compound vapour deposition (MOCVD)

MOCVD is a technology that uses H2 to send metal-organic compound vapour and gaseous non-metal hydride to a heated substrate in a reaction chamber through a switch network, and grow an epitaxial layer on the surface of the substrate through thermal decomposition. The advantage of this method is that it uses a gaseous source, and the growth rate is much faster than that of MBE, which is conducive to the mass production of materials such as large-area ultra-thin layers superlattices. The disadvantage is that the flatness and thickness are not well controlled, and the gas source used is toxic and flammable, and safety must be paid attention to during use.

3. Chemical beam epitaxy (CBE)

CBE uses gaseous sources instead of solid sources on MBE equipment. It has both the advantages of MBE and MOCVD. It can also grow phosphide superlattice materials that are difficult to control the growth of MBE but are very important. It can eliminate the frequent occurrence of MBE materials. The elliptical defect caused by Ga source has good uniformity.


Due to changes in consumer demand, import and export conditions, and various investigations on the development of sio2, the cost of sio2 is constantly changing. Taking into account the current market macroeconomic parameters, value chain analysis, channel partners, demand and supply, the cost of sio2 will also be affected to a certain extent. It is estimated that the cost of sio2 will increase slightly from today to next week.

However, TRUNNANO provides high purity Nano sio2 with steady price. “In order to feedback to old customers, the company is still in full operations to provide sio2 with competitive price.” said Olina, sales manager of TRUNNANO.


TRUNNANO (aka. Luoyang Tongrun Nano Technology Co. Ltd.) is a trusted global chemical material supplier & manufacturer with over 12 years experience in providing super high-quality chemicals and Nanomaterials. As a leading nanotechnology development and sio2 manufacturer, Luoyang Tongrun dominates the market. Our professional work team provides perfect solutions to help improve the efficiency of various industries, create value, and easily cope with various challenges.

If you are looking for sio2, please send an email to: sales1@nanotrun.com 

OR go to the following link: nanotrun.com




Say something
  • All comments(0)
    No comment yet. Please say something!
Tag: Introduction   Vapor   by   Deposition   chemical   sio2   of   preparation   process   The